Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias
Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...
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| Main Authors: | , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2020
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/142599 |
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| 總結: | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel emission, and Fowler-Nordheim tunneling have been identified for these samples, respectively. Self-consistent parameters are extracted through the analysis of leakage current conduction mechanisms: (1) optical dielectric constant (1.98-3.69), and (2) Schottky barrier height (1.66-2.21 eV). In terms of leakage current density, the ALD process is preferred over the sputtering process during the fabrication because the sputtered electrodes result in more traps in the vertical dielectric layers. |
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