Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

10.1109/TED.2007.908863

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Bibliographic Details
Main Authors: Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Crystallization
Flash memories
Flash memory
HfO2
Partial crystallization
Two-bit/four-level properties
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82864
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82864

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