Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

10.1109/TED.2007.908863

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Bibliographic Details
Main Authors:	Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82864
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82864
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spelling	sg-nus-scholar.10635-828642023-10-26T21:02:02Z Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J. ELECTRICAL & COMPUTER ENGINEERING Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties 10.1109/TED.2007.908863 IEEE Transactions on Electron Devices 54 12 3177-3185 IETDA 2014-10-07T04:34:24Z 2014-10-07T04:34:24Z 2007-12 Article Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J. (2007-12). Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory. IEEE Transactions on Electron Devices 54 (12) : 3177-3185. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908863 00189383 http://scholarbank.nus.edu.sg/handle/10635/82864 000251268300006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties
spellingShingle	Crystallization Flash memories Flash memory HfO2 Partial crystallization Two-bit/four-level properties Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J. Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
description	10.1109/TED.2007.908863
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J.
format	Article
author	Zhang, G. Samanta, S.K. Singh, P.K. Ma, F.-J. Yoo, M.-T. Roh, Y. Yoo, W.J.
author_sort	Zhang, G.
title	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
title_short	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
title_full	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
title_fullStr	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
title_full_unstemmed	Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory
title_sort	partial crystallization of hfo2 for two-bit/four-level sonos-type flash memory
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82864
_version_	1781784240153690112

Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

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