Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

Partial crystallization of HfO2 for two-bit/four-level SONOS-type flash memory

10.1109/TED.2007.908863

Saved in:
Bibliographic Details
Main Authors: Zhang, G., Samanta, S.K., Singh, P.K., Ma, F.-J., Yoo, M.-T., Roh, Y., Yoo, W.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Crystallization
Flash memories
Flash memory
HfO2
Partial crystallization
Two-bit/four-level properties
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82864
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/TED.2007.908863

Similar Items