Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors

Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors

10.1109/LED.2009.2010532

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Bibliographic Details
Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate-all-around (GAA) silicon nanowire (SiNW)
Metallic nanowire (NW) contacts
Sheet resistance
Ultrathin silicide film
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82760
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82760

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