Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors
10.1109/LED.2009.2010532
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2014
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sg-nus-scholar.10635-827602023-10-30T08:02:00Z Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Gate-all-around (GAA) silicon nanowire (SiNW) Metallic nanowire (NW) contacts Sheet resistance Ultrathin silicide film 10.1109/LED.2009.2010532 IEEE Electron Device Letters 30 2 195-197 EDLED 2014-10-07T04:33:10Z 2014-10-07T04:33:10Z 2009 Article Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L. (2009). Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors. IEEE Electron Device Letters 30 (2) : 195-197. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2010532 07413106 http://scholarbank.nus.edu.sg/handle/10635/82760 000262861600031 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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ScholarBank@NUS |
| topic |
Gate-all-around (GAA) silicon nanowire (SiNW) Metallic nanowire (NW) contacts Sheet resistance Ultrathin silicide film |
| spellingShingle |
Gate-all-around (GAA) silicon nanowire (SiNW) Metallic nanowire (NW) contacts Sheet resistance Ultrathin silicide film Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| description |
10.1109/LED.2009.2010532 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. |
| format |
Article |
| author |
Jiang, Y. Liow, T.Y. Singh, N. Tan, L.H. Lo, G.Q. Chan, D.S.H. Kwong, D.L. |
| author_sort |
Jiang, Y. |
| title |
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| title_short |
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| title_full |
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| title_fullStr |
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| title_full_unstemmed |
Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors |
| title_sort |
nickel salicided source/drain extensions for performance improvement in ultrascaled (sub 10 nm) si-nanowire transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82760 |
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1781784216626790400 |