A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications

A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications

10.1109/LED.2013.2244056

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Bibliographic Details
Main Authors: Wang, T., Lou, L., Lee, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
linearity
silicon nanowire (SiNW) FET
Third-order intermodulation (IM3)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81879
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81879

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