A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications

10.1109/LED.2013.2244056

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Bibliographic Details
Main Authors:	Wang, T., Lou, L., Lee, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	linearity silicon nanowire (SiNW) FET Third-order intermodulation (IM3)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81879
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Institution:	National University of Singapore

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