A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications

10.1109/LED.2013.2244056

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Bibliographic Details
Main Authors:	Wang, T., Lou, L., Lee, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	linearity silicon nanowire (SiNW) FET Third-order intermodulation (IM3)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81879
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81879
record_format	dspace
spelling	sg-nus-scholar.10635-818792024-11-09T08:00:11Z A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications Wang, T. Lou, L. Lee, C. ELECTRICAL & COMPUTER ENGINEERING linearity silicon nanowire (SiNW) FET Third-order intermodulation (IM3) 10.1109/LED.2013.2244056 IEEE Electron Device Letters 34 4 478-480 EDLED 2014-10-07T04:22:47Z 2014-10-07T04:22:47Z 2013 Article Wang, T., Lou, L., Lee, C. (2013). A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications. IEEE Electron Device Letters 34 (4) : 478-480. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2244056 07413106 http://scholarbank.nus.edu.sg/handle/10635/81879 000316813100001 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	linearity silicon nanowire (SiNW) FET Third-order intermodulation (IM3)
spellingShingle	linearity silicon nanowire (SiNW) FET Third-order intermodulation (IM3) Wang, T. Lou, L. Lee, C. A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
description	10.1109/LED.2013.2244056
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, T. Lou, L. Lee, C.
format	Article
author	Wang, T. Lou, L. Lee, C.
author_sort	Wang, T.
title	A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
title_short	A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
title_full	A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
title_fullStr	A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
title_full_unstemmed	A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
title_sort	junctionless gate-all-around silicon nanowire fet of high linearity and its potential applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81879
_version_	1821189695137120256

A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications

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