Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors

• Main Authors: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Gate-all-around (GAA) silicon nanowire (SiNW); Metallic nanowire (NW) contacts; Sheet resistance; Ultrathin silicide film
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82760
• Institution: National University of Singapore

10.1109/LED.2009.2010532