Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

• Main Authors: Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Gate-all-around (GAA); Nanowire; Nonvolatile memory; Polycrystalline silicon (poly-Si); SONOS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57087
• Institution: National University of Singapore

10.1109/LED.2008.2011503