Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

10.1109/LED.2008.2011503

Saved in:

Bibliographic Details
Main Authors:	Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate-all-around (GAA) Nanowire Nonvolatile memory Polycrystalline silicon (poly-Si) SONOS
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57087
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-57087
record_format	dspace
spelling	sg-nus-scholar.10635-570872023-10-26T09:14:44Z Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture Fu, J. Jiang, Y. Singh, N. Zhu, C.X. Lo, G.Q. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Gate-all-around (GAA) Nanowire Nonvolatile memory Polycrystalline silicon (poly-Si) SONOS 10.1109/LED.2008.2011503 IEEE Electron Device Letters 30 3 246-249 EDLED 2014-06-17T03:02:06Z 2014-06-17T03:02:06Z 2009 Article Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L. (2009). Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture. IEEE Electron Device Letters 30 (3) : 246-249. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2011503 07413106 http://scholarbank.nus.edu.sg/handle/10635/57087 000263920400015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Gate-all-around (GAA) Nanowire Nonvolatile memory Polycrystalline silicon (poly-Si) SONOS
spellingShingle	Gate-all-around (GAA) Nanowire Nonvolatile memory Polycrystalline silicon (poly-Si) SONOS Fu, J. Jiang, Y. Singh, N. Zhu, C.X. Lo, G.Q. Kwong, D.L. Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
description	10.1109/LED.2008.2011503
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fu, J. Jiang, Y. Singh, N. Zhu, C.X. Lo, G.Q. Kwong, D.L.
format	Article
author	Fu, J. Jiang, Y. Singh, N. Zhu, C.X. Lo, G.Q. Kwong, D.L.
author_sort	Fu, J.
title	Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
title_short	Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
title_full	Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
title_fullStr	Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
title_full_unstemmed	Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture
title_sort	polycrystalline si nanowire sonos nonvolatile memory cell fabricated on a gate-all-around (gaa) channel architecture
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57087
_version_	1781781343417401344

Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

Similar Items