Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

10.1109/TED.2010.2088125

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Bibliographic Details
Main Authors: Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Core/shell (C/S)
germanium (Ge)
metaloxidesemiconductor field-effect transistor (MOSFET)
nanowire (NW)
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82412
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82412

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