Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

• Main Authors: Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Core/shell (C/S); germanium (Ge); metaloxidesemiconductor field-effect transistor (MOSFET); nanowire (NW); topdown
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82412
• Institution: National University of Singapore

10.1109/TED.2010.2088125