Strained germanium nanowire optoelectronic devices for photonic-integrated circuits

• المؤلفون الرئيسيون: Qi, Zhipeng, Sun, Hao, Luo, Manlin, Jung, Yongduck, Nam, Donguk
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Nanowire; Germanium
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/136706
• المؤسسة: Nanyang Technological University

Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineeri...