Strained germanium nanowire optoelectronic devices for photonic-integrated circuits

• Main Authors: Qi, Zhipeng, Sun, Hao, Luo, Manlin, Jung, Yongduck, Nam, Donguk
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Nanowire; Germanium
• Online Access: https://hdl.handle.net/10356/136706
• Institution: Nanyang Technological University

Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineeri...