Strained germanium nanowire optoelectronic devices for photonic-integrated circuits
Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineeri...
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/136706 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-136706 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1367062020-10-21T06:07:34Z Strained germanium nanowire optoelectronic devices for photonic-integrated circuits Qi, Zhipeng Sun, Hao Luo, Manlin Jung, Yongduck Nam, Donguk School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Nanowire Germanium Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineering by elastic strain have opened up the possibility of achieving direct bandgap in germanium, paving the way towards the realization of various high-performance optical devices integrated on a silicon platform. In particular, the latest demonstration of a low-threshold optically pumped laser in a highly strained germanium nanowire is expected to vitalize the field of silicon photonics further. Here, we review recent advances and challenges in strained germanium nanowires for optoelectronic applications such as photodetectors and lasers. We firstly introduce the theoretical foundation behind strained germanium nanowire optoelectronics. And several practical approaches that have been proposed to apply tensile strain in germanium nanowires are further discussed. Then we address the latest progress in the developments of strained germanium nanowire optoelectronic devices. Finally, we discuss the implications of these experimental achievements and the future outlook in this promising research field. Ministry of Education (MOE) Accepted version This work was supported by MOE under AcRF Tier 1 (RG 179/17) and Start-Up Grant (M4082093.040) from Nanyang Technological University (NTU) in Singapore. This work is also 20 supported by National Research Foundation of Singapore through the Competitive Research Program (NRF2017NRF-CRP001-003). 2020-01-10T07:54:49Z 2020-01-10T07:54:49Z 2018 Journal Article Qi, Z., Sun, H., Luo, M., Jung, Y., & Nam, D. (2018). Strained germanium nanowire optoelectronic devices for photonic-integrated circuits. Journal of Physics: Condensed Matter, 30(33), 334004-. doi:10.1088/1361-648x/aad0c0 0953-8984 https://hdl.handle.net/10356/136706 10.1088/1361-648X/aad0c0 29968583 2-s2.0-85051439369 33 30 en RG179/17 NRF-CRP19-2017-01 Journal of Physics: Condensed Matter © 2018 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-648X/aad0c0 application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Engineering::Electrical and electronic engineering Nanowire Germanium |
spellingShingle |
Engineering::Electrical and electronic engineering Nanowire Germanium Qi, Zhipeng Sun, Hao Luo, Manlin Jung, Yongduck Nam, Donguk Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
description |
Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineering by elastic strain have opened up the possibility of achieving direct bandgap in germanium, paving the way towards the realization of various high-performance optical devices integrated on a silicon platform. In particular, the latest demonstration of a low-threshold optically pumped laser in a highly strained germanium nanowire is expected to vitalize the field of silicon photonics further. Here, we review recent advances and challenges in strained germanium nanowires for optoelectronic applications such as photodetectors and lasers. We firstly introduce the theoretical foundation behind strained germanium nanowire optoelectronics. And several practical approaches that have been proposed to apply tensile strain in germanium nanowires are further discussed. Then we address the latest progress in the developments of strained germanium nanowire optoelectronic devices. Finally, we discuss the implications of these experimental achievements and the future outlook in this promising research field. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Qi, Zhipeng Sun, Hao Luo, Manlin Jung, Yongduck Nam, Donguk |
format |
Article |
author |
Qi, Zhipeng Sun, Hao Luo, Manlin Jung, Yongduck Nam, Donguk |
author_sort |
Qi, Zhipeng |
title |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
title_short |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
title_full |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
title_fullStr |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
title_full_unstemmed |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
title_sort |
strained germanium nanowire optoelectronic devices for photonic-integrated circuits |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/136706 |
_version_ |
1683492945890639872 |