Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

10.1109/TED.2010.2088125

Saved in:

Bibliographic Details
Main Authors:	Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Core/shell (C/S) germanium (Ge) metaloxidesemiconductor field-effect transistor (MOSFET) nanowire (NW) topdown
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82412
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82412
record_format	dspace
spelling	sg-nus-scholar.10635-824122023-10-30T07:54:24Z Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process Peng, J.W. Singh, N. Lo, G.Q. Bosman, M. Ng, C.M. Lee, S.J. ELECTRICAL & COMPUTER ENGINEERING Core/shell (C/S) germanium (Ge) metaloxidesemiconductor field-effect transistor (MOSFET) nanowire (NW) topdown 10.1109/TED.2010.2088125 IEEE Transactions on Electron Devices 58 1 74-79 IETDA 2014-10-07T04:29:06Z 2014-10-07T04:29:06Z 2011-01 Article Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J. (2011-01). Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process. IEEE Transactions on Electron Devices 58 (1) : 74-79. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2088125 00189383 http://scholarbank.nus.edu.sg/handle/10635/82412 000285840100011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Core/shell (C/S) germanium (Ge) metaloxidesemiconductor field-effect transistor (MOSFET) nanowire (NW) topdown
spellingShingle	Core/shell (C/S) germanium (Ge) metaloxidesemiconductor field-effect transistor (MOSFET) nanowire (NW) topdown Peng, J.W. Singh, N. Lo, G.Q. Bosman, M. Ng, C.M. Lee, S.J. Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
description	10.1109/TED.2010.2088125
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Peng, J.W. Singh, N. Lo, G.Q. Bosman, M. Ng, C.M. Lee, S.J.
format	Article
author	Peng, J.W. Singh, N. Lo, G.Q. Bosman, M. Ng, C.M. Lee, S.J.
author_sort	Peng, J.W.
title	Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
title_short	Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
title_full	Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
title_fullStr	Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
title_full_unstemmed	Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
title_sort	germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82412
_version_	1781784130986442752

Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process

Similar Items