A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

10.1109/LED.2011.2181971

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Bibliographic Details
Main Authors: Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Resistive random access memory (RAM) (RRAM)
resistive switching
self-rectify
unipolar
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81910
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81910

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