A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

10.1109/LED.2011.2181971

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Bibliographic Details
Main Authors:	Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81910
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81910
record_format	dspace
spelling	sg-nus-scholar.10635-819102023-10-25T22:23:54Z A self-rectifying HfO x-based unipolar RRAM with Nisi electrode Tran, X.A. Zhu, W.G. Gao, B. Kang, J.F. Liu, W.J. Fang, Z. Wang, Z.R. Yeo, Y.C. Nguyen, B.Y. Li, M.F. Yu, H.Y. ELECTRICAL & COMPUTER ENGINEERING Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar 10.1109/LED.2011.2181971 IEEE Electron Device Letters 33 4 585-587 EDLED 2014-10-07T04:23:08Z 2014-10-07T04:23:08Z 2012-04 Article Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y. (2012-04). A self-rectifying HfO x-based unipolar RRAM with Nisi electrode. IEEE Electron Device Letters 33 (4) : 585-587. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2181971 07413106 http://scholarbank.nus.edu.sg/handle/10635/81910 000302232900040 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar
spellingShingle	Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar Tran, X.A. Zhu, W.G. Gao, B. Kang, J.F. Liu, W.J. Fang, Z. Wang, Z.R. Yeo, Y.C. Nguyen, B.Y. Li, M.F. Yu, H.Y. A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
description	10.1109/LED.2011.2181971
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tran, X.A. Zhu, W.G. Gao, B. Kang, J.F. Liu, W.J. Fang, Z. Wang, Z.R. Yeo, Y.C. Nguyen, B.Y. Li, M.F. Yu, H.Y.
format	Article
author	Tran, X.A. Zhu, W.G. Gao, B. Kang, J.F. Liu, W.J. Fang, Z. Wang, Z.R. Yeo, Y.C. Nguyen, B.Y. Li, M.F. Yu, H.Y.
author_sort	Tran, X.A.
title	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
title_short	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
title_full	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
title_fullStr	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
title_full_unstemmed	A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
title_sort	self-rectifying hfo x-based unipolar rram with nisi electrode
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81910
_version_	1781784013966409728

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

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