A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

• Main Authors: Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Resistive random access memory (RAM) (RRAM); resistive switching; self-rectify; unipolar
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81910
• Institution: National University of Singapore

10.1109/LED.2011.2181971