Design of gradient oxide-bypassed superjunction power MOSFET devices

Design of gradient oxide-bypassed superjunction power MOSFET devices

10.1109/TPEL.2007.900559

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Bibliographic Details
Main Authors: Chen, Y., Liang, Y.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Breakdown voltage
Gradient oxide-bypassed (GOB)
Ideal unipolar silicon limit
Oxide-bypassed (OB)
Power MOSFETs
Specific on-state resistance
Superjunction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55578
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55578

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