Design of gradient oxide-bypassed superjunction power MOSFET devices
10.1109/TPEL.2007.900559
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sg-nus-scholar.10635-555782024-11-11T08:21:05Z Design of gradient oxide-bypassed superjunction power MOSFET devices Chen, Y. Liang, Y.C. Samudra, G.S. ELECTRICAL & COMPUTER ENGINEERING Breakdown voltage Gradient oxide-bypassed (GOB) Ideal unipolar silicon limit Oxide-bypassed (OB) Power MOSFETs Specific on-state resistance Superjunction 10.1109/TPEL.2007.900559 IEEE Transactions on Power Electronics 22 4 1303-1310 ITPEE 2014-06-17T02:44:41Z 2014-06-17T02:44:41Z 2007-07 Article Chen, Y., Liang, Y.C., Samudra, G.S. (2007-07). Design of gradient oxide-bypassed superjunction power MOSFET devices. IEEE Transactions on Power Electronics 22 (4) : 1303-1310. ScholarBank@NUS Repository. https://doi.org/10.1109/TPEL.2007.900559 08858993 http://scholarbank.nus.edu.sg/handle/10635/55578 000247983600023 Scopus |
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Breakdown voltage Gradient oxide-bypassed (GOB) Ideal unipolar silicon limit Oxide-bypassed (OB) Power MOSFETs Specific on-state resistance Superjunction |
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Breakdown voltage Gradient oxide-bypassed (GOB) Ideal unipolar silicon limit Oxide-bypassed (OB) Power MOSFETs Specific on-state resistance Superjunction Chen, Y. Liang, Y.C. Samudra, G.S. Design of gradient oxide-bypassed superjunction power MOSFET devices |
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10.1109/TPEL.2007.900559 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Chen, Y. Liang, Y.C. Samudra, G.S. |
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Article |
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Chen, Y. Liang, Y.C. Samudra, G.S. |
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Chen, Y. |
title |
Design of gradient oxide-bypassed superjunction power MOSFET devices |
title_short |
Design of gradient oxide-bypassed superjunction power MOSFET devices |
title_full |
Design of gradient oxide-bypassed superjunction power MOSFET devices |
title_fullStr |
Design of gradient oxide-bypassed superjunction power MOSFET devices |
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Design of gradient oxide-bypassed superjunction power MOSFET devices |
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design of gradient oxide-bypassed superjunction power mosfet devices |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/55578 |
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