Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

• Main Authors: Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84169
• Institution: National University of Singapore

10.1109/IEDM.2011.6131648