Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

10.1109/IEDM.2011.6131648

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Bibliographic Details
Main Authors:	Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84169
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84169
record_format	dspace
spelling	sg-nus-scholar.10635-841692024-11-08T16:45:58Z Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials Tran, X.A. Gao, B. Kang, J.F. Wu, X. Wu, L. Fang, Z. Wang, Z.R. Pey, K.L. Yeo, Y.C. Du, A.Y. Liu, M. Nguyen, B.Y. Li, M.F. Yu, H.Y. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2011.6131648 Technical Digest - International Electron Devices Meeting, IEDM 31.2.1-31.2.4 TDIMD 2014-10-07T04:49:35Z 2014-10-07T04:49:35Z 2011 Conference Paper Tran, X.A.,Gao, B.,Kang, J.F.,Wu, X.,Wu, L.,Fang, Z.,Wang, Z.R.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Liu, M.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials. Technical Digest - International Electron Devices Meeting, IEDM : 31.2.1-31.2.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2011.6131648" target="_blank">https://doi.org/10.1109/IEDM.2011.6131648</a> 9781457705052 01631918 http://scholarbank.nus.edu.sg/handle/10635/84169 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/IEDM.2011.6131648
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tran, X.A. Gao, B. Kang, J.F. Wu, X. Wu, L. Fang, Z. Wang, Z.R. Pey, K.L. Yeo, Y.C. Du, A.Y. Liu, M. Nguyen, B.Y. Li, M.F. Yu, H.Y.
format	Conference or Workshop Item
author	Tran, X.A. Gao, B. Kang, J.F. Wu, X. Wu, L. Fang, Z. Wang, Z.R. Pey, K.L. Yeo, Y.C. Du, A.Y. Liu, M. Nguyen, B.Y. Li, M.F. Yu, H.Y.
spellingShingle	Tran, X.A. Gao, B. Kang, J.F. Wu, X. Wu, L. Fang, Z. Wang, Z.R. Pey, K.L. Yeo, Y.C. Du, A.Y. Liu, M. Nguyen, B.Y. Li, M.F. Yu, H.Y. Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
author_sort	Tran, X.A.
title	Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
title_short	Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
title_full	Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
title_fullStr	Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
title_full_unstemmed	Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
title_sort	self-rectifying and forming-free unipolar hfo x based-high performance rram built by fab-avaialbe materials
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84169
_version_	1821210479001862144

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

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