Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

10.1109/IEDM.2011.6131648

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Bibliographic Details
Main Authors: Tran, X.A., Gao, B., Kang, J.F., Wu, X., Wu, L., Fang, Z., Wang, Z.R., Pey, K.L., Yeo, Y.C., Du, A.Y., Liu, M., Nguyen, B.Y., Li, M.F., Yu, H.Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84169
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2011.6131648

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