Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping

• المؤلفون الرئيسيون: Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98992; http://hdl.handle.net/10220/13474
• المؤسسة: Nanyang Technological University

Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The...