Dislocations and traps in MBE grown lattice mismatched p-InGaAs/GaAs layers on GaAs substrates

by Du, A.Y., Li, M.F., Chong, T.C., Zhang, Z.
Published 2014

Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing

by Poon, C.H., Tan, L.S., Cho, B.J., Du, A.Y.
Published 2014

Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant

by Tong, Y., Koh, S.-M., Zhou, Q., Du, A.Y., Yeo, Y.-C.
Published 2014

Observation of carrier concentration saturation effect in n-type AlxGa1-xAs

by Du, A.Y., Li, M.F., Chong, T.C., Chua, S.J.
Published 2014

Carrier concentration saturation in n type AlxGa1-xAs

by Du, A.Y., Li, M.F., Chong, T.C., Chua, S.J.
Published 2014

Comment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs"

by Li, M.F., Du, A.Y., Luo, Y.Y., Chua, S.J.
Published 2014

Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures

by Du, A.Y., Li, M.F., Chong, T.C., Teo, K.L., Lau, W.S.
Published 2014

Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors

by Koh, Y.W., Lai, C.S., Du, A.Y., Tiekink, E.R.T., Loh, K.P.
Published 2014

Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures

by Du, A.Y., Li, M.F., Chong, T.C., Teo, K.L., Lau, W.S., Zhang, Z.
Published 2014

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

by Du, A.Y., Li, M.F., Chong, T.C., Xu, S.J., Zhang, Z., Yu, D.P.
Published 2014

Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2

by Ho, V., Choi, W.K., Chim, W.K., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

by Du, A.Y., Li, M.F., Chong, T.C., Xu, S.J., Zhang, Z., Yu, D.P.
Published 2014

Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2

by Ho, V., Choi, W.K., Chim, W.K., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014

Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2

by Ho, V., Choi, W.K., Chim, W.K., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014

Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices

by Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Chin, A., Du, A.Y.
Published 2014

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

by Yu, X., Zhu, C., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
Published 2014

Pulsed laser annealing of ultra-shallow junctions in silicon-germanium

by Tan, L.S., Tan, J.Y., Begum, A., Hong, M.H., Du, A.Y., Bhat, M., Wang, X.C.
Published 2014

Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric

by Yu, X., Zhu, C., Li, M.F., Chin, A., Yu, M.B., Du, A.Y., Kwong, D.-L.
Published 2014

Crystalline amorphous semiconductor superlattice

by Chong, T.C., Shi, L.P., Wei, X.Q., Zhao, R., Lee, H.K., Yang, P., Du, A.Y.
Published 2014

Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel...

by Ng, T.H., Chim, W.K., Choi, W.K., Ho, V., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014