Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

10.1063/1.1795369

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82245
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82245

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