Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric

• Main Authors: Yu, X., Zhu, C., Li, M.F., Chin, A., Yu, M.B., Du, A.Y., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82705
• Institution: National University of Singapore

10.1109/LED.2004.831199