Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric
10.1109/LED.2004.831199
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Main Authors: | Yu, X., Zhu, C., Li, M.F., Chin, A., Yu, M.B., Du, A.Y., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82705 |
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Institution: | National University of Singapore |
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