High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Wang, X.P., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83780
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83780

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