High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

• Main Authors: Yu, X., Zhu, C., Wang, X.P., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83780
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology