Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M., Li, M.F., Chin, A., Tung, C.H., Gui, D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83445
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83445

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