Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

• Main Authors: Yu, X., Zhu, C., Yu, M., Li, M.F., Chin, A., Tung, C.H., Gui, D., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83445
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting, IEDM