Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application

Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application

10.1109/LED.2006.875722

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Bibliographic Details
Main Authors: Yu, X., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High-κ gate dielectric
Interface-state density (Dit)
Metal gate
Mobility
MOSFETs
Tthermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81940
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81940

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