Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

• Main Authors: Wang, X.P., Li, M.-F., Ren, C., Yu, X.F., Shen, C., Ma, H.H., Chin, A., Zhu, C.X., Ning, J., Yu, M.B., Kwong, D.-L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: HfLaO; High-κ dielectric; Metal gate; MOSFET
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83224
• 機構: National University of Singapore

10.1109/LED.2005.859950