Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns

by Tan, K.M., Yoo, W.J., Ma, H.H.H., Li, F., Chan, L.
Published 2014

Fourfold oscillation in anisotropic magnetoresistance and planar Hall effect at the LaAlO3/SrTiO3 heterointerfaces: Effect of carrier confinement and electric field on magnetic int...

by Annadi, A., Huang, Z., Gopinadhan, K., Wang, X.R., Srivastava, A., Liu, Z.Q., Ma, H.H., Sarkar, T.P., Venkatesan, T., Ariando
Published 2014

A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

by Ren, C., Yu, H.Y., Kang, J.F., Wang, X.P., Ma, H.H.H., Yeo, Y.-C., Chan, D.S.H., Li, M.-F., Kwong, D.-L.
Published 2014

Fermi pinning-induced thermal instability of metal-gate work functions

by Yu, H.Y., Ren, C., Yeo, Y.-C., Kang, J.F., Wang, X.P., Ma, H.H.H., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

by Wang, X.P., Li, M.-F., Ren, C., Yu, X.F., Shen, C., Ma, H.H., Chin, A., Zhu, C.X., Ning, J., Yu, M.B., Kwong, D.-L.
Published 2014

Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

by Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.
Published 2014