Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

• Main Authors: Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOS; Dual-metal gate; N-type; TaTbxN; Thermal stability
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83197
• Institution: National University of Singapore

10.1109/LED.2004.841469