Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

10.1109/LED.2006.882569

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Bibliographic Details
Main Authors: Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOS
Dual work function (WF)
Gate first
Intermixing (InM)
Metal gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83280
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83280

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