Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

• Main Authors: Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOS; Dual work function (WF); Gate first; Intermixing (InM); Metal gate
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83280
• Institution: National University of Singapore

10.1109/LED.2006.882569