Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

10.1109/LED.2005.859631

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Bibliographic Details
Main Authors: Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Effective work function
Fermi-level pinning
Fully silicided (FUSI) gate
High-K
Ni-silicided gate
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83073
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83073

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