Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

10.1109/LED.2005.859631

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Bibliographic Details
Main Authors:	Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Effective work function Fermi-level pinning Fully silicided (FUSI) gate High-K Ni-silicided gate
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83073
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83073
record_format	dspace
spelling	sg-nus-scholar.10635-830732023-10-29T20:57:59Z Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric Joo, M.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Effective work function Fermi-level pinning Fully silicided (FUSI) gate High-K Ni-silicided gate 10.1109/LED.2005.859631 IEEE Electron Device Letters 26 12 882-884 EDLED 2014-10-07T04:36:56Z 2014-10-07T04:36:56Z 2005-12 Article Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631 07413106 http://scholarbank.nus.edu.sg/handle/10635/83073 000233681700008 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Effective work function Fermi-level pinning Fully silicided (FUSI) gate High-K Ni-silicided gate
spellingShingle	Effective work function Fermi-level pinning Fully silicided (FUSI) gate High-K Ni-silicided gate Joo, M.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L. Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
description	10.1109/LED.2005.859631
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Joo, M.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L.
format	Article
author	Joo, M.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L.
author_sort	Joo, M.S.
title	Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
title_short	Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
title_full	Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
title_fullStr	Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
title_full_unstemmed	Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
title_sort	stoichiometry dependence of fermi-level pinning in fully silicided (fusi) nisi gate on high-k dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83073
_version_	1781784293406670848

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

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