Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET

• Main Authors: Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.H., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Interlayer; Metal gate; Nickel fully silicided (Ni-FUSI); Terbium (Tb); Work function modulation; Yttrium (Y)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83283
• Institution: National University of Singapore

10.1109/LED.2007.896892