Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET
10.1109/LED.2007.896892
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sg-nus-scholar.10635-832832023-10-30T07:24:42Z Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.H. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Interlayer Metal gate Nickel fully silicided (Ni-FUSI) Terbium (Tb) Work function modulation Yttrium (Y) 10.1109/LED.2007.896892 IEEE Electron Device Letters 28 6 482-485 EDLED 2014-10-07T04:39:29Z 2014-10-07T04:39:29Z 2007-06 Article Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.H., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2007-06). Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET. IEEE Electron Device Letters 28 (6) : 482-485. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.896892 07413106 http://scholarbank.nus.edu.sg/handle/10635/83283 000246822000005 Scopus |
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Interlayer Metal gate Nickel fully silicided (Ni-FUSI) Terbium (Tb) Work function modulation Yttrium (Y) |
| spellingShingle |
Interlayer Metal gate Nickel fully silicided (Ni-FUSI) Terbium (Tb) Work function modulation Yttrium (Y) Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.H. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| description |
10.1109/LED.2007.896892 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.H. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. |
| format |
Article |
| author |
Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.H. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. |
| author_sort |
Lim, A.E.-J. |
| title |
Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| title_short |
Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| title_full |
Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| title_fullStr |
Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| title_full_unstemmed |
Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET |
| title_sort |
yttrium- and terbium-based interlayer on sio2 and hfo2 gate dielectrics for work function modulation of nickel fully silicided gate in nmosfet |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83283 |
| _version_ |
1781784350016143360 |