Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

• Main Authors: Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Band edge workfunction; Fully silicided (FUSI); N-MOSFETs; Ni/Yb
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57828
• Institution: National University of Singapore

10.1109/LED.2006.870252