Diorganotin salicylaldoximate clusters: Their fascinating chemistry and structures

by Gielen, M., Biesemans, M., Willem, R., Tiekink, E.R.T.
Published 2014

Low work function metal alloy

by YU HONGYU, JINGDE CHEN, MINGFU LI, KWONG DIM-LEE, BIESEMANS SERGE
Published 2012

Crystal structure, anti-fungal activity and phytotoxicity of diorganotin compounds of dihalo-substituted [(2-hydroxyphenyl) methylideneamino]thiourea

by Sarkar, B., Choudhury, A.K., Roy, A., Biesemans, M., Willem, R., Ng, S.W., Tiekink, E.R.T.
Published 2010

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

by YU, HONGYU, JINGDE, CHEN, MINGFU, LI, KWONG, DIM-LEE, BIESEMANS, SERGE, KITTL, JORGE ADRIAN
Published 2012

Structure characterization of the products of the reaction between racemic 1,2,4-butane triol and di-tert-butyltin oxide

by Biesemans, M., Buytaert, G., Van Lokeren, L., Martins, J.C., Willem, R., Tiekink, E.R.T.
Published 2014

Low work function metal alloy

by YU HONGYU, JINGDE CHEN N., MINGFU LI N., KWONG DIM-LEE, BIESEMANS SERGE, KITTL JORGE ADRIAN
Published 2012

Low work function metal alloy

by YU HONGYU, JINGDE CHEN N., MINGFU LI N., KWONG DIM-LEE, BIESEMANS SERGE, KITTL JORGE ADRIAN
Published 2012

Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

by Wang, X.P., Yu, H.Y., Yeo, Y.-C., Li, M.-F., Chang, S.-Z., Cho, H.-J., Kubicek, S., Wouters, D., Groeseneken, G., Biesemans, S.
Published 2014

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

by Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
Published 2014

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

by Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Work function tunability by incorporating lanthanum and aluminum into refractory metal nitrides and a feasible integration process

by Wang, X.P., Li, M.-F., Yu, H.Y., Ren, C., Loh, W.Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.Q., Kwong, D.L.
Published 2014

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

by Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L.
Published 2014

Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

by Wang, X.P., Yu, H.Y., Li, M.-F., Zhu, C.X., Biesemans, S., Chin, A., Sun, Y.Y., Feng, Y.P., Lim, A., Yeo, Y.-C., Loh, W.Y., Lo, G.Q., Kwong, D.-L.
Published 2014

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs

by Lousberg, G.P., Yu, H.Y., Froment, B., Li, M.F., Augendre, E., De Keersgieter, A., Demeurisse, C., Brus, S., Degroote, B., Hoffmann, T., Lauwers, A., DePotter, M., Kubicek, S., Anil, K., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

by Wang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L.
Published 2014

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

by Yu, H.Y., Chen, J.D., Li, M.F., Lee, S.J., Kwong, D.L., Van Dal, M., Kittl, J.A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

by Yu, H.Y., Kittl, J.A., Lauwers, A., Singanamalla, R., Demeurisse, C., Kubicek, S., Augendre, E., Veloso, A., Brus, S., Vrancken, C., Hoffmann, T., Mertens, S., Onsia, B., Verbeeck, R., Demand, M., Rothchild, A., Froment, B., Van Dal, M., De Meyer, K., Li, M.F., Chen, J.D., Jurczak, M., Absil, P.P., Biesemans, S.
Published 2014