Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs

• Main Authors: Lousberg, G.P., Yu, H.Y., Froment, B., Li, M.F., Augendre, E., De Keersgieter, A., Demeurisse, C., Brus, S., Degroote, B., Hoffmann, T., Lauwers, A., DePotter, M., Kubicek, S., Anil, K., Absil, P., Jurczak, M., Biesemans, S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70239
• Institution: National University of Singapore

10.1109/ESSDER.2006.307694