Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs

10.1109/ESSDER.2006.307694

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Main Authors: Lousberg, G.P., Yu, H.Y., Froment, B., Li, M.F., Augendre, E., De Keersgieter, A., Demeurisse, C., Brus, S., Degroote, B., Hoffmann, T., Lauwers, A., DePotter, M., Kubicek, S., Anil, K., Absil, P., Jurczak, M., Biesemans, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70239
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-702392015-02-23T21:21:35Z Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs Lousberg, G.P. Yu, H.Y. Froment, B. Li, M.F. Augendre, E. De Keersgieter, A. Demeurisse, C. Brus, S. Degroote, B. Hoffmann, T. Lauwers, A. DePotter, M. Kubicek, S. Anil, K. Absil, P. Jurczak, M. Biesemans, S. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDER.2006.307694 ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference 286-289 2014-06-19T03:09:49Z 2014-06-19T03:09:49Z 2007 Conference Paper Lousberg, G.P.,Yu, H.Y.,Froment, B.,Li, M.F.,Augendre, E.,De Keersgieter, A.,Demeurisse, C.,Brus, S.,Degroote, B.,Hoffmann, T.,Lauwers, A.,DePotter, M.,Kubicek, S.,Anil, K.,Absil, P.,Jurczak, M.,Biesemans, S. (2007). Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 286-289. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDER.2006.307694" target="_blank">https://doi.org/10.1109/ESSDER.2006.307694</a> 1424403014 http://scholarbank.nus.edu.sg/handle/10635/70239 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/ESSDER.2006.307694
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lousberg, G.P.
Yu, H.Y.
Froment, B.
Li, M.F.
Augendre, E.
De Keersgieter, A.
Demeurisse, C.
Brus, S.
Degroote, B.
Hoffmann, T.
Lauwers, A.
DePotter, M.
Kubicek, S.
Anil, K.
Absil, P.
Jurczak, M.
Biesemans, S.
format Conference or Workshop Item
author Lousberg, G.P.
Yu, H.Y.
Froment, B.
Li, M.F.
Augendre, E.
De Keersgieter, A.
Demeurisse, C.
Brus, S.
Degroote, B.
Hoffmann, T.
Lauwers, A.
DePotter, M.
Kubicek, S.
Anil, K.
Absil, P.
Jurczak, M.
Biesemans, S.
spellingShingle Lousberg, G.P.
Yu, H.Y.
Froment, B.
Li, M.F.
Augendre, E.
De Keersgieter, A.
Demeurisse, C.
Brus, S.
Degroote, B.
Hoffmann, T.
Lauwers, A.
DePotter, M.
Kubicek, S.
Anil, K.
Absil, P.
Jurczak, M.
Biesemans, S.
Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
author_sort Lousberg, G.P.
title Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
title_short Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
title_full Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
title_fullStr Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
title_full_unstemmed Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
title_sort experimental and simulation study of the schottky barrier lowering by substrate doping variation for ptsi source/drain sbfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/70239
_version_ 1681087162419773440

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