Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

• Main Authors: Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/69242
• Institution: National University of Singapore

10.1109/ICSICT.2006.306263