Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

10.1109/ICSICT.2006.306263

Saved in:
Bibliographic Details
Main Authors: Yu, H.Y., Li, M.F., Lauwers, A., Kittl, J.A., Singanamalla, R., Veloso, A., Hoffmann, T., De Meyer, K., Jurczak, M., Absil, P., Biesemans, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69242
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-69242
record_format dspace
spelling sg-nus-scholar.10635-692422015-01-17T17:55:57Z Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices Yu, H.Y. Li, M.F. Lauwers, A. Kittl, J.A. Singanamalla, R. Veloso, A. Hoffmann, T. De Meyer, K. Jurczak, M. Absil, P. Biesemans, S. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ICSICT.2006.306263 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 404-407 2014-06-19T02:58:26Z 2014-06-19T02:58:26Z 2007 Conference Paper Yu, H.Y.,Li, M.F.,Lauwers, A.,Kittl, J.A.,Singanamalla, R.,Veloso, A.,Hoffmann, T.,De Meyer, K.,Jurczak, M.,Absil, P.,Biesemans, S. (2007). Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 404-407. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2006.306263" target="_blank">https://doi.org/10.1109/ICSICT.2006.306263</a> 1424401615 http://scholarbank.nus.edu.sg/handle/10635/69242 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/ICSICT.2006.306263
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yu, H.Y.
Li, M.F.
Lauwers, A.
Kittl, J.A.
Singanamalla, R.
Veloso, A.
Hoffmann, T.
De Meyer, K.
Jurczak, M.
Absil, P.
Biesemans, S.
format Conference or Workshop Item
author Yu, H.Y.
Li, M.F.
Lauwers, A.
Kittl, J.A.
Singanamalla, R.
Veloso, A.
Hoffmann, T.
De Meyer, K.
Jurczak, M.
Absil, P.
Biesemans, S.
spellingShingle Yu, H.Y.
Li, M.F.
Lauwers, A.
Kittl, J.A.
Singanamalla, R.
Veloso, A.
Hoffmann, T.
De Meyer, K.
Jurczak, M.
Absil, P.
Biesemans, S.
Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
author_sort Yu, H.Y.
title Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
title_short Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
title_full Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
title_fullStr Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
title_full_unstemmed Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices
title_sort advanced ni-based fully silicidation (fusi) technology for sub-45nm cmos devices
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/69242
_version_ 1681086977831600128

Similar Items